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proceedings of the ieee cover sep 2017
proceedings of the ieee cover sep 2017

Special Issue: Solid-State Drives

Volume 105, Issue 9

September 2017

Guest Editors

Special Issue Papers

By R. Micheloni and P. Olivo

By L. Zuolo, C. Zambelli, R. Micheloni, and P. Olivo

This paper describes design methodologies to optimize the performances of solid-state drives based on the underlying Flash technology.

By C. Monzio Compagnoni, A. Goda, A. S. Spinelli, P. Feeley, A. L. Lacaita, and A. Visconti

This paper reviews historical trends of nand Flash technologies, explaining why scaling of planar arrays below 1x nm is less favorable than vertical integration.

By R. Micheloni, S. Aritome, and L. Crippa

This paper is about 3-D nand Flash memories and related integration challenges, covering charge trap and floating gate options.

By F. Chen, T. Zhang, and X. Zhang

This paper is focused on the software aspects of the solid-state drives, from the Flash translation layer (FTL) to the operating system.

By Y. Cai, S. Ghose, E. F. Haratsch, Y. Luo, and O. Mutlu

This paper reviews the most recent advances in solid-state drive (SSD) error characterization, mitigation, and data recovery techniques to improve both SSD’s reliability and lifetime.

By L. Dolecek and Y. Cassuto

This paper provides an overview of most popular error-correction codes (ECCs) used in conjunction with nonvolatile memories.

By N. R. Mielke, R. E. Frickey, I. Kalastirsky, M. Quan, D. Ustinov, and V. J. Vasudevan

This paper reviews SSD’s reliability from the perspective of failure mechanisms and design mitigation techniques, with particular emphasis on the JEDEC qualification methods.

By B. Schroeder, A. Merchant, and R. Lagisetty

This paper presents reliability studies of nand-based SSDs in production environments, subjected to real workloads and operating conditions.

By H. Wu, X. H. Wang, B. Gao, N. Deng, Z. Lu, B. Haukness, G. Bronner, and H. Qian

This paper reviews the fundamental materials and process integration needed for high volume manufacturing of resistive RAMs.

By C. Zambelli, G. Navarro, V. Sousa, I. L. Prejbeanu, and L. Perniola

This paper reviews phase change memories and magnetic memories technologies from the perspective of their possible application in future SSDs.

By C. Matsui, C. Sun, and K. Takeuchi

This paper presents the advantages of hybrid SSDs integrating both storage class memories and nand Flash memories with respect to standard nand-Flash-based SSDs

By F. T. Hady, A. Foong, B. Veal, and D. Williams

This paper reviews the potentialities on computing introduced by the 3-D XPoint technology in changing the memory-storage hierarchy.

Point of View

By Jun Li, Jon Atli Benediktsson, Bing Zhang, Tao Yang and Antonio Plaza

proceedings of the ieee pov sep 2017

Scanning Our Past

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