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proceedings of the ieee cover jun 2017
proceedings of the ieee cover jun 2017

Special Issue: Terahertz RF Electronics and System Integration

Volume 105, Issue 6

June 2017

Guest Editors

Special Issue Papers

By T. W. Crowe, W. R. Deal, M. Schröter, C.-K. C. Tzuang, and K. Wu

By I. Mehdi, J. V. Siles, C. Lee, and E. Schlecht

This paper describes the current status of GaAs Schottky diode technology including operation, performance, and application to mixers and multipliers.

By J. Stake, A. Malko, T. Bryllert, and J. Vukusic

The paper provides an overview of the heterostructure barrier varactor (HBV) and its application to frequency multipliers.

By L. Liu, S. M. Rahman, Z. Jiang, W. Li, and P. Fay

This paper describes a novel diode for detector applications at submillimeter-wave frequencies.

By P. Chevalier, M. Schröter, C. R. Bolognesi, V. d’Alessandro, M. Alexandrova, J. Böck, R. Flückiger, S. Fregonese, B. Heinemann, C. Jungemann, R. Lövblom, C. Maneux, O. Ostinelli, A. Pawlak, N. Rinaldi, H. Rücker, G. Wedel, and T. Zimmer

This paper describes Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors (HBTs), and provides information on thermal and substrate effects, reliability, and radio-frequency (RF) performance.

By M. Urteaga, Z. Griffith, M. Seo, J. Hacker, and M. J. W. Rodwell

This paper describes the operation and scaling of InP heterojunction bipolar transistors (HBTs) to terahertz frequencies.

By M. Schröter, T. Rosenbaum, P. Chevalier, B. Heinemann, S. P. Voinigescu, E. Preisler, J. Böck, and A. Mukherjee

This paper presents a technology roadmap for the electrical performance of high-speed silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs).

S. P. Voinigescu, S. Shopov, J. Bateman, H. Farooq, J. Hoffman, and K. Vasilakopoulos

This paper reviews the technology requirements of future 100–300-GHz millimeter-wave systems-on-chip for various applications.

By N. S. Barker, M. Bauwens, A. Lichtenberger, and R. Weikle, II

This paper considers the development of terahertz systems-on-chip using micromachining techniques based on silicon-on-insulator technology.

By H.-J. Song

This paper provides an overview of recent progress in interconnections and packaging technologies for the practical use of terahertz electronic devices and integrated circuits.

By G. Chattopadhyay, T. Reck, C. Lee, and C. Jung-Kubiak

This paper highlights key developments in the use of micromachining techniques for the packaging of terahertz frequency systems.

By M. Naftaly, R. G. Clarke, D. A. Humphreys, and N. M. Ridler

The paper reviews the state of the art and challenges of terahertz metrology in both free-space and waveguide-based instrumentation. In particular, it discusses the instrumental and methodological disconnect between the two platforms, and the barriers to establishing interoperability.

By S.-W. Qu, H. Yi, B. J. Chen, K. B. Ng, and C. H. Chan

This paper reviews developments in wave manipulation from microwave to optical frequencies, together with new results in the terahertz regime.

Point of View

Scanning Our Past

By Zoran S. Bojkovic, Bojan M. Bakmaz, and Miodrag R. Bakmaz

proceedings of the ieee sop jun 2017
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