By P. Chevalier, M. Schröter, C. R. Bolognesi, V. d’Alessandro, M. Alexandrova, J. Böck, R. Flückiger, S. Fregonese, B. Heinemann, C. Jungemann, R. Lövblom, C. Maneux, O. Ostinelli, A. Pawlak, N. Rinaldi, H. Rücker, G. Wedel, and T. Zimmer
This paper describes Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors (HBTs), and provides information on thermal and substrate effects, reliability, and radio-frequency (RF) performance.
By M. Schröter, T. Rosenbaum, P. Chevalier, B. Heinemann, S. P. Voinigescu, E. Preisler, J. Böck, and A. Mukherjee
This paper presents a technology roadmap for the electrical performance of high-speed silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs).
This paper provides an overview of recent progress in interconnections and packaging technologies for the practical use of terahertz electronic devices and integrated circuits.
By M. Naftaly, R. G. Clarke, D. A. Humphreys, and N. M. Ridler
The paper reviews the state of the art and challenges of terahertz metrology in both free-space and waveguide-based instrumentation. In particular, it discusses the instrumental and methodological disconnect between the two platforms, and the barriers to establishing interoperability.