Guest Editors:

Thomas Crowe
William Deal
Michael Shroter
Clive C. K. Tzuang
Ke Wu

Special Issue Papers

Scanning the Issue: Terahertz RF Electronics and System Integration

By T. W. Crowe, W. R. Deal, M. Schröter, C.-K. C. Tzuang, and K. Wu

THz Diode Technology: Status, Prospects, and Applications

By I. Mehdi, J. V. Siles, C. Lee, and E. Schlecht

This paper describes the current status of GaAs Schottky diode technology including operation, performance, and application to mixers and multipliers.

Status and Prospects of High-Power Heterostructure Barrier Varactor Frequency Multipliers

By J. Stake, A. Malko, T. Bryllert, and J. Vukusic

The paper provides an overview of the heterostructure barrier varactor (HBV) and its application to frequency multipliers.

Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices

By L. Liu, S. M. Rahman, Z. Jiang, W. Li, and P. Fay

This paper describes a novel diode for detector applications at submillimeter-wave frequencies.

Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

By P. Chevalier, M. Schröter, C. R. Bolognesi, V. d’Alessandro, M. Alexandrova, J. Böck, R. Flückiger, S. Fregonese, B. Heinemann, C. Jungemann, R. Lövblom, C. Maneux, O. Ostinelli, A. Pawlak, N. Rinaldi, H. Rücker, G. Wedel, and T. Zimmer

This paper describes Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors (HBTs), and provides information on thermal and substrate effects, reliability, and radio-frequency (RF) performance.

InP HBT Technologies for THz Integrated Circuits

By M. Urteaga, Z. Griffith, M. Seo, J. Hacker, and M. J. W. Rodwell

This paper describes the operation and scaling of InP heterojunction bipolar transistors (HBTs) to terahertz frequencies.

SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

By M. Schröter, T. Rosenbaum, P. Chevalier, B. Heinemann, S. P. Voinigescu, E. Preisler, J. Böck, and A. Mukherjee

This paper presents a technology roadmap for the electrical performance of high-speed silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs).

Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon

S. P. Voinigescu, S. Shopov, J. Bateman, H. Farooq, J. Hoffman, and K. Vasilakopoulos

This paper reviews the technology requirements of future 100–300-GHz millimeter-wave systems-on-chip for various applications.

Silicon-on-Insulator Substrates as a Micromachining Platform for Advanced Terahertz Circuits

By N. S. Barker, M. Bauwens, A. Lichtenberger, and R. Weikle, II

This paper considers the development of terahertz systems-on-chip using micromachining techniques based on silicon-on-insulator technology.

Packages for Terahertz Electronics

By H.-J. Song

This paper provides an overview of recent progress in interconnections and packaging technologies for the practical use of terahertz electronic devices and integrated circuits.

Micromachined Packaging for Terahertz Systems

By G. Chattopadhyay, T. Reck, C. Lee, and C. Jung-Kubiak

This paper highlights key developments in the use of micromachining techniques for the packaging of terahertz frequency systems.

Metrology State-of-the-Art and Challenges in Broadband Phase-Sensitive Terahertz Measurements

By M. Naftaly, R. G. Clarke, D. A. Humphreys, and N. M. Ridler

The paper reviews the state of the art and challenges of terahertz metrology in both free-space and waveguide-based instrumentation. In particular, it discusses the instrumental and methodological disconnect between the two platforms, and the barriers to establishing interoperability.

Terahertz Reflecting and Transmitting Metasurfaces

By S.-W. Qu, H. Yi, B. J. Chen, K. B. Ng, and C. H. Chan

This paper reviews developments in wave manipulation from microwave to optical frequencies, together with new results in the terahertz regime.

Point of View

Scanning Our Past

Hamming Window to the Digital World

By Zoran S. Bojkovic, Bojan M. Bakmaz, and Miodrag R. Bakmaz