Terahertz RF Electronics and System Integration
Volume 105, Issue 6 | June 2017
Special Issue Papers
By T. W. Crowe, W. R. Deal, M. Schröter, C.-K. C. Tzuang, and K. Wu
By I. Mehdi, J. V. Siles, C. Lee, and E. Schlecht
This paper describes the current status of GaAs Schottky diode technology including operation, performance, and application to mixers and multipliers.
By J. Stake, A. Malko, T. Bryllert, and J. Vukusic
The paper provides an overview of the heterostructure barrier varactor (HBV) and its application to frequency multipliers.
Advanced Terahertz Sensing and Imaging Systems Based on Integrated III-V Interband Tunneling Devices
By L. Liu, S. M. Rahman, Z. Jiang, W. Li, and P. Fay
This paper describes a novel diode for detector applications at submillimeter-wave frequencies.
By P. Chevalier, M. Schröter, C. R. Bolognesi, V. d’Alessandro, M. Alexandrova, J. Böck, R. Flückiger, S. Fregonese, B. Heinemann, C. Jungemann, R. Lövblom, C. Maneux, O. Ostinelli, A. Pawlak, N. Rinaldi, H. Rücker, G. Wedel, and T. Zimmer
This paper describes Si/SiGe:C and InP/GaAsSb heterojunction bipolar transistors (HBTs), and provides information on thermal and substrate effects, reliability, and radio-frequency (RF) performance.
By M. Urteaga, Z. Griffith, M. Seo, J. Hacker, and M. J. W. Rodwell
This paper describes the operation and scaling of InP heterojunction bipolar transistors (HBTs) to terahertz frequencies.
By M. Schröter, T. Rosenbaum, P. Chevalier, B. Heinemann, S. P. Voinigescu, E. Preisler, J. Böck, and A. Mukherjee
This paper presents a technology roadmap for the electrical performance of high-speed silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs).
Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon
S. P. Voinigescu, S. Shopov, J. Bateman, H. Farooq, J. Hoffman, and K. Vasilakopoulos
This paper reviews the technology requirements of future 100–300-GHz millimeter-wave systems-on-chip for various applications.
By N. S. Barker, M. Bauwens, A. Lichtenberger, and R. Weikle, II
This paper considers the development of terahertz systems-on-chip using micromachining techniques based on silicon-on-insulator technology.
By H.-J. Song
This paper provides an overview of recent progress in interconnections and packaging technologies for the practical use of terahertz electronic devices and integrated circuits.
By G. Chattopadhyay, T. Reck, C. Lee, and C. Jung-Kubiak
This paper highlights key developments in the use of micromachining techniques for the packaging of terahertz frequency systems.
By M. Naftaly, R. G. Clarke, D. A. Humphreys, and N. M. Ridler
The paper reviews the state of the art and challenges of terahertz metrology in both free-space and waveguide-based instrumentation. In particular, it discusses the instrumental and methodological disconnect between the two platforms, and the barriers to establishing interoperability.
By S.-W. Qu, H. Yi, B. J. Chen, K. B. Ng, and C. H. Chan
This paper reviews developments in wave manipulation from microwave to optical frequencies, together with new results in the terahertz regime.